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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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AIMW120R045M1XKSA1
AIMW120R045M1XKSA1
MOSFETs AIMW120R045M1XKSA1
Infineon
AIMW120R045M1XKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
AIMW120R045M1XKSA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)200
Process TechnologyTMOS
Standard Package NameTO-247
Typical Fall Time (ns)13
Typical Rise Time (ns)32
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)228000
Typical Gate Charge @ Vgs (nC)57@15V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)17
Maximum Gate Threshold Voltage (V)5.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)52
Typical Input Capacitance @ Vds (pF)2130@80V
Maximum Drain Source Resistance (MOhm)59@15V
Maximum Gate Source Leakage Current (nA)120
Description
Trans MOSFET N-CH SiC 1.2KV 52A Automotive 3-Pin(3+Tab) TO-247 Tube
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