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APT10035B2LLG
APT10035B2LLG
MOSFETs APT10035B2LLG
Microchip Technology
APT10035B2LLG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)100
Typical Fall Time (ns)9
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)690000
Typical Gate Charge @ 10V (nC)186
Typical Gate Charge @ Vgs (nC)186@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)1000
Typical Turn-Off Delay Time (ns)36
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)28
Typical Input Capacitance @ Vds (pF)5185@25V
Maximum Drain Source Resistance (MOhm)350@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 1KV 28A
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