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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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APT5022BNG
APT5022BNG
MOSFETs APT5022BNG
Microchip Technology
APT5022BNG
--
Diodes, Transistors and Thyristors
MOSFETs
APT5022BNG.pdf
Specification
Product AttributeAttribute Value
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)250
Process TechnologyPower MOS IV
Typical Fall Time (ns)56
Typical Rise Time (ns)43
Number of Elements per Chip1
Maximum Power Dissipation (mW)360000
Typical Gate Charge @ 10V (nC)140
Typical Gate Charge @ Vgs (nC)140@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)85
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)27
Typical Input Capacitance @ Vds (pF)2890@25V
Maximum Drain Source Resistance (mOhm)220@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 27A
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