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APT50SM120B
APT50SM120B
MOSFETs APT50SM120B
Microchip Technology
APT50SM120B
--
Diodes, Transistors and Thyristors
MOSFETs
APT50SM120B.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)100
Standard Package NameTO
Typical Fall Time (ns)32
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)273000
Typical Gate Charge @ Vgs (nC)166@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)64
Maximum Gate Threshold Voltage (V)2.4(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)47
Typical Input Capacitance @ Vds (pF)3460
Maximum Drain Source Resistance (MOhm)65@20V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 1.2KV 47A 3-Pin(3+Tab) TO-247
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