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APT6025BVRG
APT6025BVRG
MOSFETs APT6025BVRG
Microchip Technology
APT6025BVRG
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Diodes, Transistors and Thyristors
MOSFETs
APT6025BVRG.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height21.46(Max)
Package Length16.26(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)25
Process TechnologyPower MOS V
Standard Package NameTO
Typical Fall Time (ns)10
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)370000
Typical Gate Charge @ 10V (nC)185
Typical Gate Charge @ Vgs (nC)185@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)525
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)5.2
Typical Turn-Off Delay Time (ns)55
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)85@10V
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)23
Typical Reverse Recovery Time (ns)580
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)4300@25V
Typical Reverse Recovery Charge (nC)12000
Maximum Drain Source Resistance (MOhm)250@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)100
Typical Reverse Transfer Capacitance @ Vds (pF)220@25V
Description
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
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