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MOSFETs APT60N60SCSG
Microchip Technology
APT60N60SCSG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 13.99(Max) |
| Package Height | 5.08(Max) |
| Package Length | 16.05(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D3PAK |
| Process Technology | CoolMOS |
| Standard Package Name | TO-268 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 20 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 431000 |
| Typical Gate Charge @ 10V (nC) | 150 |
| Typical Gate Charge @ Vgs (nC) | 150@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 60 |
| Typical Input Capacitance @ Vds (pF) | 7200@25V |
| Maximum Drain Source Resistance (mOhm) | 45@10V |
| Description |
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