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APT80SM120J
APT80SM120J
MOSFETs APT80SM120J
Microchip Technology
APT80SM120J
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Diodes, Transistors and Thyristors
MOSFETs
APT80SM120J.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width25.4(Max)
Package Height9.6(Max)
Package Length38.2(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-227
Maximum IDSS (uA)100
Typical Fall Time (ns)21
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)273000
Typical Gate Charge @ Vgs (nC)235@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)42
Maximum Gate Threshold Voltage (V)2.5(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)51
Typical Input Capacitance @ Vds (pF)4600@1000V
Maximum Drain Source Resistance (MOhm)55@20V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 1.2KV 51A 4-Pin SOT-227 Tube
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