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APTC60DDAM70T1G
APTC60DDAM70T1G
MOSFETs APTC60DDAM70T1G
Microchip Technology
APTC60DDAM70T1G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count10
AutomotiveNo
PCB changed10
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width40.8
Package Height11.5
Package Length51.6
Product CategoryPower MOSFET
Supplier PackageCase SP-1
Maximum IDSS (uA)25
Process TechnologyCoolMOS
Typical Fall Time (ns)84
Typical Rise Time (ns)30
Number of Elements per Chip2
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)259
Typical Gate Charge @ Vgs (nC)259@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)283
Maximum Gate Threshold Voltage (V)3.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)39
Typical Input Capacitance @ Vds (pF)7000@25V
Maximum Drain Source Resistance (MOhm)70@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 39A 10-Pin Case SP-1 Tube
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