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MOSFETs APTC90SKM60CT1G
Microchip Technology
APTC90SKM60CT1G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 10 |
| Automotive | No |
| PCB changed | 10 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 40.8 |
| Package Height | 11.5 |
| Package Length | 51.6 |
| Product Category | Power MOSFET |
| Supplier Package | Case SP-1 |
| Maximum IDSS (uA) | 200 |
| Process Technology | CoolMOS |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 20 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 462000 |
| Typical Gate Charge @ 10V (nC) | 540 |
| Typical Gate Charge @ Vgs (nC) | 540@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 70 |
| Maximum Drain Source Voltage (V) | 900 |
| Typical Turn-Off Delay Time (ns) | 400 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 59 |
| Typical Input Capacitance @ Vds (pF) | 13600@100V |
| Maximum Drain Source Resistance (MOhm) | 60@10V |
| Maximum Gate Source Leakage Current (nA) | 200 |
| Description |
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