Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | SiC |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | NRND |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 200 |
Typical Fall Time (ns) | 36 |
Typical Rise Time (ns) | 14 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 250000 |
Typical Gate Charge @ Vgs (nC) | 182 |
Maximum Gate Source Voltage (V) | 25 |
Typical Turn-On Delay Time (ns) | 17 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Turn-Off Delay Time (ns) | 62 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 125 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 55 |
Typical Input Capacitance @ Vds (pF) | 3830@800V |
Maximum Drain Source Resistance (mOhm) | 49@20V |
Maximum Gate Source Leakage Current (nA) | 500 |
Description |