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MOSFETs APTMC120AM55CT1AG
Microchip Technology
APTMC120AM55CT1AG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)200
Typical Fall Time (ns)36
Typical Rise Time (ns)14
Number of Elements per Chip2
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ Vgs (nC)182
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)62
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)55
Typical Input Capacitance @ Vds (pF)3830@800V
Maximum Drain Source Resistance (mOhm)49@20V
Maximum Gate Source Leakage Current (nA)500
Description
Trans MOSFET N-CH SiC 1.2KV 55A Tube
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