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MOSFETs APTMC120TAM33CTPAG
Microchip Technology
APTMC120TAM33CTPAG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 23 |
| Automotive | No |
| PCB changed | 23 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Hex |
| Package Width | 62 |
| Package Height | 11.5 |
| Package Length | 108 |
| Product Category | Power MOSFET |
| Supplier Package | Case SP-6P |
| Maximum IDSS (uA) | 300 |
| Typical Fall Time (ns) | 35 |
| Typical Rise Time (ns) | 20 |
| Number of Elements per Chip | 6 |
| Maximum Power Dissipation (mW) | 370000 |
| Typical Gate Charge @ Vgs (nC) | 148@20V |
| Maximum Gate Source Voltage (V) | 25 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Maximum Gate Threshold Voltage (V) | 2.2(Typ) |
| Maximum Operating Temperature (°C) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 78 |
| Typical Input Capacitance @ Vds (pF) | 2850@1000V |
| Maximum Drain Source Resistance (MOhm) | 33@20V |
| Maximum Gate Source Leakage Current (nA) | 750 |
| Description |
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