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MOSFETs ATP213-TL-H
onsemi
ATP213-TL-H
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Diodes, Transistors and Thyristors
MOSFETs
ATP213-TL-H.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width7.3
Package Height1.5
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageATPAK
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)150
Typical Rise Time (ns)170
Number of Elements per Chip1
Maximum Power Dissipation (mW)50000
Typical Gate Charge @ 10V (nC)58
Typical Gate Charge @ Vgs (nC)58@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)23
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)230
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)3150@20V
Maximum Drain Source Resistance (mOhm)16@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 60V 50A 3-Pin(2+Tab) ATPAK T/R
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