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AUIRF1010EZ
AUIRF1010EZ
MOSFETs AUIRF1010EZ
Infineon
AUIRF1010EZ
--
Diodes, Transistors and Thyristors
MOSFETs
AUIRF1010EZ.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.02(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)54
Typical Rise Time (ns)90
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ 10V (nC)58
Typical Gate Charge @ Vgs (nC)58@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)38
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)84
Typical Input Capacitance @ Vds (pF)2810@25V
Maximum Drain Source Resistance (MOhm)8.5@10V
Maximum Gate Source Leakage Current (nA)200
Description
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(3+Tab) TO-220AB Tube
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