Product Attribute | Attribute Value |
PPAP | Unknown |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | Yes |
Part Status | Unconfirmed |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 110000 |
Typical Gate Charge @ Vgs (nC) | 46 |
Maximum Gate Source Voltage (V) | 20 |
Maximum Drain Source Voltage (V) | 60 |
Maximum Continuous Drain Current (A) | 79 |
Maximum Drain Source Resistance (mOhm) | 10 |
Description |