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AUIRF1324STRL7P
AUIRF1324STRL7P
MOSFETs AUIRF1324STRL7P
Infineon
AUIRF1324STRL7P
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Product CategoryPower MOSFET
Maximum IDSS (uA)20
Process TechnologyHEXFET
Typical Fall Time (ns)93
Typical Rise Time (ns)240
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)180
Typical Gate Charge @ Vgs (nC)180@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)24
Typical Turn-Off Delay Time (ns)86
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)429
Typical Input Capacitance @ Vds (pF)7700@19V
Maximum Drain Source Resistance (mOhm)1@10V
Maximum Gate Source Leakage Current (nA)200
Description
Trans MOSFET N-CH Si 24V 429A Automotive T/R
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