Product Attribute | Attribute Value |
Tab | Tab |
PPAP | Unknown |
EU RoHS | Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | Yes |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | NRND |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 9.02(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Process Technology | HEXFET |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 67 |
Typical Rise Time (ns) | 95 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 170000 |
Typical Gate Charge @ 10V (nC) | 76 |
Typical Gate Charge @ Vgs (nC) | 76@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 18 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 45 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 110 |
Typical Input Capacitance @ Vds (pF) | 3450@25V |
Maximum Drain Source Resistance (mOhm) | 6.5@10V |
Description |