Product Attribute | Attribute Value |
PPAP | Unknown |
EU RoHS | Compliant with Exemption |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | Yes |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quint Source |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Typical Fall Time (ns) | 52 |
Typical Rise Time (ns) | 130 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 300000 |
Typical Gate Charge @ 10V (nC) | 130 |
Typical Gate Charge @ Vgs (nC) | 130@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 23 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 80 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 240 |
Typical Input Capacitance @ Vds (pF) | 7820@25V |
Maximum Drain Source Resistance (MOhm) | 2.6@10V |
Description |