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AUIRF7478Q
AUIRF7478Q
MOSFETs AUIRF7478Q
Infineon
AUIRF7478Q
--
Diodes, Transistors and Thyristors
MOSFETs
AUIRF7478Q.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)13
Typical Rise Time (ns)2.6
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)21@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)44
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)1740@25V
Maximum Drain Source Resistance (mOhm)26@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 7A Automotive 8-Pin SOIC T/R
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