Product Attribute | Attribute Value |
HTS | 8542.39.00.01 |
EU RoHS | Compliant |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Dual Source |
Product Category | Power MOSFET |
Process Technology | DirectFET |
Typical Fall Time (ns) | 7.5 |
Typical Rise Time (ns) | 13 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2700 |
Typical Gate Charge @ 10V (nC) | 21 |
Typical Gate Charge @ Vgs (nC) | 21@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 150 |
Typical Turn-Off Delay Time (ns) | 14 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.4 |
Typical Input Capacitance @ Vds (pF) | 1360@25V |
Maximum Drain Source Resistance (MOhm) | 56@10V |
Description |