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AUIRF7737L2
AUIRF7737L2
MOSFETs AUIRF7737L2
Infineon
AUIRF7737L2
--
Diodes, Transistors and Thyristors
MOSFETs
AUIRF7737L2.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Drain Hex Source
Product CategoryPower MOSFET
Process TechnologyDirectFET
Typical Fall Time (ns)14
Typical Rise Time (ns)19
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)89
Typical Gate Charge @ Vgs (nC)89@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)5469@25V
Maximum Drain Source Resistance (mOhm)1.9@10V
Description
Trans MOSFET N-CH Si 40V 31A Automotive 13-Pin Direct-FET L6 T/R
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