Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | Unknown |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | Yes |
PCB changed | 2 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 6.22(Max) |
Package Height | 2.39(Max) |
Package Length | 6.73(Max) |
Product Category | Power MOSFET |
Supplier Package | DPAK |
Maximum IDSS (uA) | 20 |
Process Technology | HEXFET |
Standard Package Name | TO-252 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 28 |
Typical Rise Time (ns) | 59 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 110000 |
Typical Gate Charge @ 10V (nC) | 34 |
Typical Gate Charge @ Vgs (nC) | 34@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 75 |
Typical Turn-Off Delay Time (ns) | 39 |
Typical Gate to Drain Charge (nC) | 14 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 45 |
Typical Input Capacitance @ Vds (pF) | 1440@25V |
Maximum Drain Source Resistance (MOhm) | 22@10V |
Maximum Gate Source Leakage Current (nA) | 200 |
Description |