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AUIRLR2908TR
AUIRLR2908TR
MOSFETs AUIRLR2908TR
Infineon
AUIRLR2908TR
--
Diodes, Transistors and Thyristors
MOSFETs
AUIRLR2908TR.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)55
Typical Rise Time (ns)95
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)120000
Typical Gate Charge @ Vgs (nC)22@4.5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)36
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)39
Typical Input Capacitance @ Vds (pF)1890@25V
Maximum Drain Source Resistance (mOhm)28@10V
Maximum Gate Source Leakage Current (nA)200
Description
Trans MOSFET N-CH Si 80V 39A Automotive 3-Pin(2+Tab) DPAK T/R
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