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AUIRLU3114Z
AUIRLU3114Z
MOSFETs AUIRLU3114Z
Infineon
AUIRLU3114Z
--
Diodes, Transistors and Thyristors
MOSFETs
AUIRLU3114Z.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-251
Typical Fall Time (ns)50
Typical Rise Time (ns)140
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ Vgs (nC)40@4.5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)33
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)130
Typical Input Capacitance @ Vds (pF)3810@25V
Maximum Drain Source Resistance (mOhm)4.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 40V 130A Automotive 3-Pin(3+Tab) IPAK Tube
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