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BMS3003
BMS3003
MOSFETs BMS3003
onsemi
BMS3003
--
Diodes, Transistors and Thyristors
MOSFETs
BMS3003.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.5
Package Height16
Package Length10
Product CategoryPower MOSFET
Supplier PackageTO-220ML
Typical Fall Time (ns)680
Typical Rise Time (ns)360
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)285
Typical Gate Charge @ Vgs (nC)285@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)90
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)1200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)78
Typical Input Capacitance @ Vds (pF)13200@20V
Maximum Drain Source Resistance (mOhm)6.5@10V
Description
Trans MOSFET P-CH Si 60V 78A 3-Pin(3+Tab) TO-220ML Bag
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