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BS170G (CUT T&R)
BS170G (CUT T&R)
MOSFETs BS170G (CUT T&R)
onsemi
BS170G (CUT T&R)
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingBox
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategorySmall Signal
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)60
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.5
Typical Input Capacitance @ Vds (pF)60(Max)@10V
Maximum Drain Source Resistance (mOhm)5000@10V
Description
Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Box
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