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MOSFETs BSB012NE2LXIXUMA1
Infineon
BSB012NE2LXIXUMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | No |
| PCB changed | 7 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain Dual Source |
| Package Width | 4.93 |
| Package Height | 0.52 |
| Package Length | 5.5 |
| Product Category | Power MOSFET |
| Supplier Package | WDSON |
| Maximum IDSS (uA) | 500 |
| Process Technology | OptiMOS |
| Typical Fall Time (ns) | 4.8 |
| Typical Rise Time (ns) | 6.4 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Gate Charge @ 10V (nC) | 62 |
| Typical Gate Charge @ Vgs (nC) | 30@4.5V|62@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5.4 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 37 |
| Typical Input Capacitance @ Vds (pF) | 4400@12V |
| Maximum Drain Source Resistance (MOhm) | 1.2@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 400 |
| Description |
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