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MOSFETs BSB028N06NN3 G
Infineon
BSB028N06NN3 G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 7 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain Dual Source |
| Package Width | 4.93 |
| Package Height | 0.52 |
| Package Length | 5.5 |
| Product Category | Power MOSFET |
| Supplier Package | WDSON |
| Process Technology | OptiMOS 3 |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 9 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2200 |
| Typical Gate Charge @ 10V (nC) | 108 |
| Typical Gate Charge @ Vgs (nC) | 108@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 21 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 22 |
| Typical Input Capacitance @ Vds (pF) | 8800@30V |
| Maximum Drain Source Resistance (MOhm) | 2.8@10V |
| Description |
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