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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSB280N15NZ3GXT
BSB280N15NZ3GXT
MOSFETs BSB280N15NZ3GXT
Infineon
BSB280N15NZ3GXT
--
Diodes, Transistors and Thyristors
MOSFETs
BSB280N15NZ3GXT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width4.93
Package Height0.52
Package Length5.5
Product CategoryPower MOSFET
Supplier PackageWDSON
Process TechnologyOptiMOS
Standard Package NameSON
Typical Fall Time (ns)3
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)16
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)1200@75V
Maximum Drain Source Resistance (mOhm)28@10V
Description
Trans MOSFET N-CH 150V 9A 7-Pin WDSON T/R
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