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BSC010NE2LSI
BSC010NE2LSI
MOSFETs BSC010NE2LSI
Infineon
BSC010NE2LSI
--
Diodes, Transistors and Thyristors
MOSFETs
BSC010NE2LSI.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Process TechnologyOptiMOS
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4.6
Typical Rise Time (ns)6.2
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)59
Typical Gate Charge @ Vgs (nC)29@4.5V|59@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)6.3
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)32
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)38
Typical Input Capacitance @ Vds (pF)4200@12V
Maximum Drain Source Resistance (mOhm)1.05@10V
Description
Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R
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