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BSC011N03LSI
BSC011N03LSI
MOSFETs BSC011N03LSI
Infineon
BSC011N03LSI
--
Diodes, Transistors and Thyristors
MOSFETs
BSC011N03LSI.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Maximum IDSS (uA)500
Process TechnologyOptiMOS
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6.2
Typical Rise Time (ns)9.2
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)1.2
Minimum Gate Resistance (Ohm)0.3
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)68
Typical Gate Charge @ Vgs (nC)68@10V|34@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.4
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.4
Typical Turn-Off Delay Time (ns)35
Maximum Diode Forward Voltage (V)0.7
Typical Diode Forward Voltage (V)0.56
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)37
Typical Input Capacitance @ Vds (pF)4300@15V
Maximum Drain Source Resistance (MOhm)1.1@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)400
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Maximum Continuous Drain Current on PCB @ TC=25°C (A)37
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP T/R
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