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BSC014N04LSI
BSC014N04LSI
MOSFETs BSC014N04LSI
Infineon
BSC014N04LSI
--
Diodes, Transistors and Thyristors
MOSFETs
BSC014N04LSI.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height1.1(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Maximum IDSS (uA)500
Process TechnologyOptiMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)11
Typical Rise Time (ns)50
Typical Switch Charge (nC)12
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)1.8
Minimum Gate Resistance (Ohm)0.45
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)55
Typical Gate Charge @ Vgs (nC)29@4.5V|55@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)1200
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)2.5
Typical Turn-Off Delay Time (ns)55
Maximum Diode Forward Voltage (V)0.7
Typical Diode Forward Voltage (V)0.56
Typical Gate to Drain Charge (nC)8.9
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1.2
Typical Gate to Source Charge (nC)9.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)4000@20V
Typical Reverse Recovery Charge (nC)20
Maximum Drain Source Resistance (mOhm)1.45@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)780
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)90@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)31
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Power-MOSFET, 40V
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