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BSC026N04LS
BSC026N04LS
MOSFETs BSC026N04LS
Infineon
BSC026N04LS
--
Diodes, Transistors and Thyristors
MOSFETs
BSC026N04LS.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Maximum IDSS (uA)1
Process TechnologyOptiMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)1.8
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)32
Typical Gate Charge @ Vgs (nC)32@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)2.6
Typical Turn-Off Delay Time (ns)37
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.86
Maximum Gate Threshold Voltage (V)2
Typical Reverse Recovery Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23
Typical Input Capacitance @ Vds (pF)2300@20V
Maximum Drain Source Resistance (mOhm)2.6@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)400
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Maximum Continuous Drain Current on PCB @ TC=25°C (A)23
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 40V 23A Automotive 8-Pin TDSON EP T/R
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