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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSC0501NSIATMA1
BSC0501NSIATMA1
MOSFETs BSC0501NSIATMA1
Infineon
BSC0501NSIATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSC0501NSIATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Maximum IDSS (uA)500
Process TechnologyOptiMOS 5
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)11.4@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)1600@15V
Maximum Drain Source Resistance (MOhm)1.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 29A 8-Pin TDSON EP T/R
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