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BSC052N03S G
BSC052N03S G
MOSFETs BSC052N03S G
Infineon
BSC052N03S G
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Diodes, Transistors and Thyristors
MOSFETs
BSC052N03S G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Process TechnologyOptiMOS
Standard Package NameSON
Typical Fall Time (ns)4
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ Vgs (nC)16@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5.9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)2120@15V
Maximum Drain Source Resistance (MOhm)5.2@10V
Description
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP
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