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BSC059N03SGT
BSC059N03SGT
MOSFETs BSC059N03SGT
Infineon
BSC059N03SGT
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Diodes, Transistors and Thyristors
MOSFETs
BSC059N03SGT.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyOptiMOS
Typical Fall Time (ns)3.8
Typical Rise Time (ns)4.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ Vgs (nC)15@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5.7
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17.5
Typical Input Capacitance @ Vds (pF)2010@15V
Maximum Drain Source Resistance (MOhm)5.5@10V
Description
Trans MOSFET N-CH 30V 17.5A 8-Pin TDSON EP
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