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BSC072N04LDATMA1
BSC072N04LDATMA1
MOSFETs BSC072N04LDATMA1
Infineon
BSC072N04LDATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS-T2
Typical Fall Time (ns)25
Typical Rise Time (ns)4
Supplier Temperature GradeIndustrial
Number of Elements per Chip2
Maximum Power Dissipation (mW)65000
Typical Gate Charge @ 10V (nC)39
Typical Gate Charge @ Vgs (nC)39@10V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)50
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)3070@20V
Maximum Drain Source Resistance (MOhm)7.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 20A T/R
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