Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS-T2 |
Typical Fall Time (ns) | 25 |
Typical Rise Time (ns) | 4 |
Supplier Temperature Grade | Industrial |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 65000 |
Typical Gate Charge @ 10V (nC) | 39 |
Typical Gate Charge @ Vgs (nC) | 39@10V |
Maximum Gate Source Voltage (V) | 16 |
Typical Turn-On Delay Time (ns) | 9 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 50 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 20 |
Typical Input Capacitance @ Vds (pF) | 3070@20V |
Maximum Drain Source Resistance (MOhm) | 7.2@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |