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BSC13DN30NSFD
BSC13DN30NSFD
MOSFETs BSC13DN30NSFD
Infineon
BSC13DN30NSFD
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Maximum IDSS (uA)1
Process TechnologyOptiMOS 3
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)300
Typical Turn-Off Delay Time (ns)19
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)1840@150V
Maximum Drain Source Resistance (MOhm)130@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 300V 16A 8-Pin TDSON EP T/R
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