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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSD235CH6327XTSA1
BSD235CH6327XTSA1
MOSFETs BSD235CH6327XTSA1
Infineon
BSD235CH6327XTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSD235CH6327XTSA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.25
Package Height0.9(Max)
Package Length2
Product CategorySmall Signal
Supplier PackageSOT-363
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameSOT
Typical Fall Time (ns)1.2@N Channel|3.2@P Channel
Typical Rise Time (ns)3.6@N Channel|5@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)0.34@4.5V@N Channel|0.4@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)3.8
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)4.5@N Channel|5.1@P Channel
Maximum Gate Threshold Voltage (V)1.2@N Channel|0.6@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.95@N Channel|0.53@P Channel
Typical Input Capacitance @ Vds (pF)47@10V@N Channel|37@10V@P Channel
Maximum Drain Source Resistance (MOhm)350@4.5V@N Channel|1200@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 20V 0.95A/0.53A Automotive 6-Pin SOT-363 T/R
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