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MOSFETs BSG0810NDIATMA1
Infineon
BSG0810NDIATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6.1(Max) |
| Package Height | 1.1(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TISON EP |
| Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
| Process Technology | OptiMOS 5 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 1.4@Q1|2.4@Q2 |
| Typical Rise Time (ns) | 4@Q2|4.7@Q1 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 6250 |
| Typical Gate Charge @ Vgs (nC) | 5.6@4.5V@Q1|16@4.5V@Q2 |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 4.3@Q1|5.1@Q2 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 8@Q2|4.3@Q1 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 31@Q 1|50@Q 2 |
| Typical Input Capacitance @ Vds (pF) | 770@12V@Q1|2300@12V@Q2 |
| Maximum Drain Source Resistance (MOhm) | 0.9@10V@Q2|3@10V@Q1 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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