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BSH111,215
BSH111,215
MOSFETs BSH111,215
Nexperia
BSH111,215
--
Diodes, Transistors and Thyristors
MOSFETs
BSH111,215.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Typical Gate Charge @ Vgs (nC)1@8V
Maximum Gate Source Voltage (V)±10
Maximum Drain Source Voltage (V)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.335
Typical Input Capacitance @ Vds (pF)17@10V
Maximum Drain Source Resistance (mOhm)4000@4.5V
Description
Trans MOSFET N-CH 55V 0.335A 3-Pin SOT-23 T/R
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