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MOSFETs BSN045NE2LSXUSA1
Infineon
BSN045NE2LSXUSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain Dual Gate Dual Source |
| Package Width | 3.1(Max) |
| Package Height | 0.49(Max) |
| Package Length | 3.5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | USON |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 2.4 |
| Typical Rise Time (ns) | 3.4 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 11 |
| Typical Gate Charge @ Vgs (nC) | 11@10V|5.3@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 1.8 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 780@15V |
| Maximum Drain Source Resistance (MOhm) | 4.5@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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