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MOSFETs BSO612CVGXUMA1
Infineon
BSO612CVGXUMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 4 |
| Package Height | 1.45 |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | DSO |
| Typical Fall Time (ns) | 30@N Channel|95@P Channel |
| Typical Rise Time (ns) | 35@N Channel|60@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 10.3@10V@N Channel|10.5@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12@N Channel|15@P Channel |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 25@N Channel|145@P Channel |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3@N Channel|2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 275@25V@N Channel|320@25V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 120@10V@N Channel|300@10V@P Channel |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 12 |
| Description |
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