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BSO612CVNT
BSO612CVNT
MOSFETs BSO612CVNT
Infineon
BSO612CVNT
--
Diodes, Transistors and Thyristors
MOSFETs
BSO612CVNT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4
Package Height1.5
Package Length5
Product CategorySmall Signal
Supplier PackageSO
Process TechnologySIPMOS
Standard Package NameSOP
Typical Fall Time (ns)30@N Channel|95@P Channel
Typical Rise Time (ns)35@N Channel|60@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)10.3@N Channel|10.5@P Channel
Typical Gate Charge @ Vgs (nC)10.3@10V@N Channel|10.5@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12@N Channel|15@P Channel
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)25@N Channel|145@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3@N Channel|2@P Channel
Typical Input Capacitance @ Vds (pF)320@25V@P Channel|275@25V@N Channel
Maximum Drain Source Resistance (MOhm)120@10V@N Channel|300@10V@P Channel
Description
Trans MOSFET N/P-CH 60V 3A/2A 8-Pin SO
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