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BSO615NGXUMA1
BSO615NGXUMA1
MOSFETs BSO615NGXUMA1
Infineon
BSO615NGXUMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4
Package Height1.45
Package Length5
Product CategorySmall Signal
Supplier PackageDSO
Maximum IDSS (uA)1
Process TechnologySIPMOS
Standard Package NameSOP
Typical Fall Time (ns)15
Typical Rise Time (ns)15
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)14@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)90
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.8
Typical Turn-Off Delay Time (ns)20
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.95
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1.2
Typical Gate Threshold Voltage (V)1.6
Typical Reverse Recovery Time (ns)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.6
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)300@25V
Typical Reverse Recovery Charge (nC)100
Maximum Drain Source Resistance (mOhm)150@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)10.4
Typical Reverse Transfer Capacitance @ Vds (pF)50@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET N-CH 60V 2.6A Automotive 8-Pin DSO T/R
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