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BSP129H6906XTSA1
BSP129H6906XTSA1
MOSFETs BSP129H6906XTSA1
Infineon
BSP129H6906XTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.6
Package Length6.5
Product CategorySmall Signal
Supplier PackageSOT-223
Maximum IDSS (uA)50000(Min)
Process TechnologySIPMOS
Standard Package NameSOT
Typical Fall Time (ns)35
Typical Rise Time (ns)4.1
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ Vgs (nC)3.8@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)12
Typical Turn-On Delay Time (ns)4.4
Maximum Drain Source Voltage (V)240
Typical Gate Plateau Voltage (V)0.37
Typical Turn-Off Delay Time (ns)22
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.79
Typical Gate to Drain Charge (nC)1.7
Maximum Gate Threshold Voltage (V)1
Minimum Gate Threshold Voltage (V)2.1
Typical Gate Threshold Voltage (V)1.4
Typical Gate to Source Charge (nC)0.24
Typical Reverse Recovery Time (ns)53
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.35
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)82@25V
Typical Reverse Recovery Charge (nC)65
Maximum Drain Source Resistance (mOhm)6000@10V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1.4
Typical Reverse Transfer Capacitance @ Vds (pF)6@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)115
Description
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R
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