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BSP149 L6327
BSP149 L6327
MOSFETs BSP149 L6327
Infineon
BSP149 L6327
--
Diodes, Transistors and Thyristors
MOSFETs
BSP149 L6327.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.6
Package Length6.5
Product CategorySmall Signal
Supplier PackageSOT-223
Process TechnologySIPMOS
Standard Package NameSOT
Typical Fall Time (ns)21
Typical Rise Time (ns)3.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ Vgs (nC)11@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)41
Typical Turn-On Delay Time (ns)5.1
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)45
Typical Gate to Drain Charge (nC)5.6
Maximum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.74
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.66
Typical Input Capacitance @ Vds (pF)326@25V
Typical Reverse Recovery Charge (nC)60
Maximum Drain Source Resistance (MOhm)1800@10V
Description
Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
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