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BSP299 L6327
BSP299 L6327
MOSFETs BSP299 L6327
Infineon
BSP299 L6327
--
Diodes, Transistors and Thyristors
MOSFETs
BSP299 L6327.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.6
Package Length6.5
Product CategorySmall Signal
Supplier PackageSOT-223
Process TechnologySIPMOS
Standard Package NameSOT
Typical Fall Time (ns)30
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.4
Typical Input Capacitance @ Vds (pF)300@25V
Maximum Drain Source Resistance (MOhm)4000@10V
Description
Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
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