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BSS123E6327T
BSS123E6327T
MOSFETs BSS123E6327T
Infineon
BSS123E6327T
--
Diodes, Transistors and Thyristors
MOSFETs
BSS123E6327T.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategorySmall Signal
Process TechnologySIPMOS
Typical Fall Time (ns)25
Typical Rise Time (ns)3.1
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Typical Gate Charge @ 10V (nC)1.78
Typical Gate Charge @ Vgs (nC)1.78@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)2.7
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)9.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.17
Typical Input Capacitance @ Vds (pF)55@25V
Maximum Drain Source Resistance (MOhm)6000@10V
Description
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
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