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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSS123NH6433XTMA1
BSS123NH6433XTMA1
MOSFETs BSS123NH6433XTMA1
Infineon
BSS123NH6433XTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSS123NH6433XTMA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)0.01
Process TechnologyOptiMOS
Typical Fall Time (ns)22
Typical Rise Time (ns)3.2
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ 10V (nC)0.6
Typical Gate Charge @ Vgs (nC)0.6@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)2.3
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)7.4
Maximum Diode Forward Voltage (V)1.1
Maximum Gate Threshold Voltage (V)1.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.19
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)15.7@25V
Maximum Drain Source Resistance (mOhm)6000@10V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)20
Description
Trans MOSFET N-CH 100V 0.19A Automotive
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