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BSS139IXTSA1
BSS139IXTSA1
MOSFETs BSS139IXTSA1
Infineon
BSS139IXTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSS139IXTSA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
AutomotiveYes
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Product CategorySmall Signal
Typical Fall Time (ns)182
Typical Rise Time (ns)5.4
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Typical Gate Charge @ Vgs (nC)2.3@5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)5.8
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)29
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)60@25V
Maximum Drain Source Resistance (MOhm)14000@10V
Description
Trans MOSFET N-CH 250V 0.1A T/R
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